Abstract
By using a first principle method, we address the plasmon manipulation of diamond crystal as a function of electron and hole doped concentration ranging from light to the heavy doping regime. Our results indicate that with increasing doping concentration plasmon resonances shift to lower energies into the near ultraviolet. Further, for electron and hole doped material, bulk plasmon dispersion shows a different trend compared with undoped crystal particularly at the small momentum transfer which is attributed to strong inhomogeneity of electron charge density. Eventually, by comparison of phonon linewidths a general discussion is presented about possible mechanisms of plasmon-phonon coupling. At heavy doping regime, near the zone edge, optical phonons have the most growing contribution in bulk plasmon damping which may lead to enhanced plasmon-assisted Raman scattering for doped diamond.
Published Version
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