Abstract
Previously, we demonstrated the principal possibility to synthesize arsenic telluride films of different chemical and phase composition by PECVD when we directly use elemental arsenic and tellurium as the precursors. This paper presents the results of systematic study of physicochemical properties of As-Te films prepared in low-temperature non-equilibrium RF (40 MHz) argon plasma discharge at low pressure (0.1 Torr) as well. The surface morphology, structure and thermal crystallization behavior of the films obtained were studied in dependence on the plasma parameters of the deposition process. The characteristics of stationary and transitional photoconductivity of the films have been studied as well.
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