Abstract
MoS2 films as an excellent solid lubricating film can significantly decrease the friction and adhesion of nanoelectromechanical systems. Atomic layer deposition (ALD) as a surface-controlled method provides a flexible way to apply MoS2 to complex surfaces. In this work, MoS2 film deposited by ALD on substrates by a plasma-assisted process is used to study controlled friction. Firstly, layer-controlled MoS2 films were fabricated by ALD from one to five layers. The friction decreases as the number of layers increases. Furthermore, the average friction force of MoS2 deposited on Al2O3 substrates treated by plasma for 10 s with one ALD cycle has the lowest value. Functional groups on the substrate surface can be obtained by plasma treatment, which can control the growth of the first layer of MoS2 in ALD so that the frictional characteristics of monolayer MoS2 can be controlled. Finally, the effect of plasma treatment on ALD growth at the intermediate stage of MoS2 is relatively weak. Only the monolayer MoS2 treated by plasma can affect the growth of MoS2 by ALD. Therefore, the controlling effect of plasma treatment on the frictional characteristics of MoS2 deposited by ALD mainly occurs at the initial stage of growth.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call