Abstract
Several devices based on 2D materials have become interesting for high-frequency applications especially sensors, amplifiers and modulators of Terahertz frequencies. Moreover, High Electron Mobility Transistors (HEMTs) have emerged as important competitors owing to the high quality of resonances associated with plasma-wave oscillations in the channel. In this study, the plasma wave resonances in a Graphene channel of High Electron Mobility Transistors (HEMTs) were studied. The calculations were based on our small-signal model and therefore can determine the resonances and voltage gain of the Monolayer and Bilayer graphene channels. The influence of the dielectric substrates between the gate and the channel, impurity depth positions and channel materials (InGaAs, Bilayer and Monolayer graphene) on the dynamic behavior of the Graphene transistor was investigated. This analysis can extract the high performance conditions of HEMTs Graphene amplifiers.
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