Abstract
In this study, the effect of plasma treatment on the low-k material FLARE 2.0 (FLARE is a trademark of Honeywell) was investigated. It was found that the leakage current of FLARE 2.0 was drastically reduced after brief plasma treatments. The moisture-absorption ability was reduced by CF4 plasma treatment, whereas following H2 and N2 plasma treatments, the moisture-absorption ability was increased. The increased moisture uptake did not affect the dielectric property of FLARE 2.0. The dry etch characteristics of FLARE 2.0 in helicon-wave high-density oxygen plasmas were also studied. The etch rate and selectivity to oxide can be controlled by bias power and the addition of CHF3 or N2.
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