Plasma polymerization of fluorocarbons in rf capacitively coupled diode system

Abstract

Work is reviewed which deals with the interrelationship between plasma etching and plasma polymerization, with emphasis on the plasma-surface interactions leading to polymerization. Particular reference is made to work done in this laboratory relating to the synthesis of metal containing fluoropolymers by simultaneous plasma etching and polymerization in the same system. The polymer deposition rate, at the grounded electrode in a rf capacitively coupled diode reactor configuration, is shown to be strongly dependent on the excitation electrode material, as well as the fluorine/carbon stoichiometry of the injected fluorocarbon. Addition of oxygen to a fluorocarbon plasma enhances etching and reduces polymerization, thus increasing the metal content of the polymer films. Addition of hydrogen on the other hand has the opposite effect. In all cases discussions are presented of the film structures as well as the most likely precursors in the gas phase which lead to polymerization.