Abstract
In this work we present indium tin oxide free polymer photovoltaic devices featuring a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) anode that has been patterned by oxygen plasma etching. By optimizing the PEDOT:PSS formulation and thickness, we achieved conductivities up to 400 S/cm. The best overall power conversion efficiency was found to be 2.2% under equivalent illumination to one sun with a PEDOT:PSS film conductivity of 300 S/cm.
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