Abstract
A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one-step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium-to-arsenic ratio of nearly one. The electrical properties (I-V, C-V) of the films are such that this process may be useful in device fabrication.
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