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Abstract
It is shown that spontaneous and piezoelectric polarization fields, inherent in GaN lattices, combined with constrained carrier motion along the quantum wells, give rise to equilibrium plasma nanosheaths. Induced potentials are localized within nm Debye lengths with peak voltages much larger than the thermal carrier energy. The associated energy band-bending causes enhanced carrier accumulation at quantum wedges and quantum tips formed by intersecting quantum wells. The total carrier number over an entire quantum well (QW) also increases, compared to flat bands, manifesting spontaneous intrinsic pumping due to polarization. It follows that the spontaneous emission is localized at quantum wedges, and the total emission exceeds that from a flat quantum well of similar parameters, as experimentally observed. The sheath potentials are sufficiently high for 1D or 0D carrier localization at quantum wedges and quantum tips.
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