Abstract
In this work, the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes of a strained InGaN/GaN quantum well are investigated numerically. In the effective-mass approximation, the electronic energy levels and the corresponding wave functions are calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the conduction band edge. Effects of intense laser field, In composition and the well width on the optical properties of the strained quantum well are studied. Results indicate that the laser field as well as the strain induced piezoelectric field considerably affects the confining potential of the quantum well. Results also show that the resonant peaks experience a red-shift (blue-shift) with the increase in the laser field intensity and well width (In composition).
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