Plasma immersion ion implantation model including multiple charge state

Abstract

The multiple charge states of a plasma have been considered to derive an universal dynamic sheath model for the application of plasma immersion ion implantation (PIII) processes. A general form of an effective mass, M, which includes species compositions, charge states, and masses, is used to determine the sheath expansion during the pulse. The implant dose components and the final implant impurity profile can be predicted with this effective mass. This offers a method for easily evaluating PIII processing and obtaining the correct doping results. A plasma simulation code PDP1 is used to compare this model.