Abstract
Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in helium is used as an ion source. A sheet resistance of 57 Omega / Square Operator and an implanted dose of 1.9*10/sup 15//cm/sup 2/ are obtained in 10 min. when the target potential is pulsed to -10 kV with a 1% duty cycle. The boron profile in the silicon substrate is different from that predicted for a conventional 10-keV ion implantation. Silicon p-n junctions fabricated by this technique are of good quality. >
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