Abstract
In the semiconductor manufacturing process, including front-end and back-end processes, when conducting plasma etching and plasma dicing of chips, both wafers and the ceramic components comprising the chamber’s interior can be influenced by intense plasma attack. The longer ceramic components are exposed to a strong plasma environment, the more those components will wear away and need to be replaced. In addition, non-volatiles generated by the reaction between the plasma gas and components can rise to the top of the wafer and cause defects. To improve semiconductor production, it is essential to minimize the generation of contaminant particles from ceramics and improve their plasma resistance and mechanical properties. Herein, we synthesized and consolidated Gd2O3-MgO nanocomposite with different incorporations of Zr4+ phase stabilizer. For the first time, we evaluated the plasma etching resistance of these nanocomposites. Compared to those of the Y2O3 reference, the etching rates and surface roughness of these nanocomposites were significantly lower. This research has proposed a variety of candidate materials for ceramic parts in plasma etching equipment; this material is not limited to Y and Al-based materials, and is expected to be applied as a next-generation material to improve the mechanical properties of MgO.
Published Version
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