Abstract
The parameters relevant to dry development of silylated polymers have been studied, in particular ion energy and atomic oxygen concentration. Critical dimension loss is demonstrated to depend upon silylation angle, sputtering rate of the silylated polymer, and development time. Anisotropic etch profiles are argued to be due to a compromise between critical dimension loss and isotropic etching of the unsilylated polymer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
