Plasma etching of III–V semiconductor thin films

Abstract

Listen

Translate article

In this paper we will describe the use of various plasma etching techniques in III–V semiconductor technology. The fabrication of a typical device involves a sequence of patterning, etching and deposition steps. The trend is toward the use of dry etching whenever possible because of the more anisotropic features and better dimensional control that can be obtained. This approach is consistent with an integrated processing concept in that plasma etching is a vacuum technique, and the dry etch reactor chamber can be coupled with other deposition, annealing or epitaxial growth chambers via load locks and transfer arms.