Abstract
Dense yttrium oxyfluoride (YOF) coating was successfully deposited by suspension plasma spraying (SPS) with coaxial feeding. After deposition for 6 min at a plasma power of 105 kW, the thickness of the YOF coating was 55 ± 3.2 µm with a porosity of 0.15% ± 0.01% and the coating rate was ~9.2 µm/min. The crystalline structure of trigonal YOF was confirmed by X-ray diffractometry (XRD). The etching behavior of the YOF coating was studied using inductively coupled CHF3/Ar plasma in comparison with those of the Al2O3 bulk and Y2O3 coating. Crater-like erosion sites and cavities were formed on the whole surface of the Al2O3 bulk and Y2O3 coating. In contrast, the surface of the YOF coating showed no noticeable difference before and after exposure to the CHF3/Ar plasma. Such high resistance of the YOF coating to fluorocarbon plasma comes from the strongly fluorinated layer on the surface. The fluorination on the surface of materials was confirmed by X-ray photoelectron spectrum analysis (XPS). Depth profiles of the compositions of Al2O3, Y2O3, and YOF samples by XPS revealed that the fluorination layer of the YOF coating was much thicker than those of Al2O3 and Y2O3. These results indicate that if the inner wall of the semiconductor process chamber is coated by YOF using SPS, the generation of contamination particles would be minimized during the fluorocarbon plasma etching process.
Highlights
In the semiconductor manufacturing process, dry etching of dielectric SiO2 and cleaning processes have increased due to multi-level interface connections [1]
The plasma etching behavior of the yttrium oxyfluoride (YOF) coating deposited by suspension plasma spraying (SPS) was studied using inductively coupled CHF3 /Ar plasma in comparison with those of Al2 O3 bulk and Y2 O3 coating
When the Al2 O3 bulk and Y2 O3 coating were exposed to fluorocarbon plasma, crater-like erosion sites and cavities were formed on the whole surface
Summary
In the semiconductor manufacturing process, dry etching of dielectric SiO2 and cleaning processes have increased due to multi-level interface connections [1]. In order to prevent the etching phenomena, SiO2 and Al2 O3 are used as plasma-resistant materials of the inner wall of the chamber They turn out to become vulnerable to the fluorocarbon plasma gases as the number of drying etching cycles increases [1,5,6,7,8]. The plasma-resistant properties of the YOF coatings were analyzed in comparison with those of Al2 O3 bulk and Y2 O3 coating After exposing these materials to fluorocarbon plasma, the surface and internal compositions were analyzed by XPS, and the crystalline structures were analyzed by XRD
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