Abstract
Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.
Highlights
In recent years, semiconducting integrated circuits (ICs) have progressed toward various functionalities on single electrical chips, and have been downscaled to nanometer size [1]
Yttrium fluoride (YF3 ) coatings have been proposed as potential alternative ceramic materials for Y2 O3 because they prevent the generation of fluoride particles
We reported the formation of a Yttrium oxyfluoride (YOF)-altered thin layer on Y2 O3 and YF3 coatings surfaces [21]
Summary
In recent years, semiconducting integrated circuits (ICs) have progressed toward various functionalities on single electrical chips, and have been downscaled to nanometer size [1]. The corrosive gases (e.g., C2 F6 , CF4 , CHF3 , and C4 F6 ) used in semiconductor manufacturing processes generate high-density fluorocarbon plasma that bombards the IC chip and reacts with its inner chamber wall and ceramic parts (such as chamber windows, electrodes, showerhead cover baffles, and rings), generating contaminant particles [4,5,6]. The plasma-facing inner wall of the chamber is often coated with yttrium oxide (Y2 O3 ), which provides superior plasma erosion resistance on silicon-based materials, and extends their lifetime. Yttrium fluoride (YF3 ) coatings have been proposed as potential alternative ceramic materials for Y2 O3 because they prevent the generation of fluoride particles
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