Abstract
Silicon oxide (SiOx) films grown by plasma-enhanced chemical-vapor deposition (PECVD) were investigated for applications in a course wavelength-division multiplexing (CWDM) network. The SiOx films were deposited on 4-in. silicon wafers based on the reaction of N2O/SiH4 precursors. After postdeposition annealing at 1,150°C, the transmission spectra of the films prepared at different flow rates of the precursor were compared. We found that the transmission spectrum of the films deposited at the low-flow conditions can be flattened to a ripple of less than 0.5 dB ranging from visible up to 1,470 nm. In addition, the material losses at wavelengths around 1,500 nm caused by absorption of Si-H and N-H bonds were significantly reduced.
Published Version
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