Abstract
High-purity films of tungsten are deposited from tungsten hexafluoride and hydrogen using plasma-enhanced deposition (PED). At 400 °C deposition temperature, resistivities of ∼40 μΩ cm are attained. After annealing at 1100 °C, the resistivity falls to ∼7 μΩ cm. Below 400 °C, the as-deposited film stress is <6×109 dynes/cm2. Tensile, unlike tungsten, molybdenum films deposited by PED displayed high resistivities.
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