Abstract
Hydrogenated amorphous silicon nitride (a-SiNx:H) films were deposited by plasma-enhanced chemical vapor deposition (PECVD), an attractive process for integrated optical device fabrication owing to the low temperatures involved (typically 200–400 °C). Two regimes of plasma radio frequency (380 kHz and 13.56 MHz) and a range of plasma powers were studied. Through physical and chemical analyses, we demonstrate the relationship between film optical properties and chemical composition. Films with refractive index close to that of stoichiometric Si3N4 and with very low absorption coefficients owing to the small number of Si–Si bonds, are obtained by low-frequency (LF) PECVD at low powers.
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