Abstract
TaN thin films were grown by plasma-enhanced atomic layer deposition using tantalum-pentafluoride as the metal precursor and plasma as the reducing agent at a temperature of . When the source pulse time exceeded , the thickness per cycle of TaN thin films was saturated at and the resistivity was about . Under this condition, the TaN thin films had a high density , which was very close to the theoretical value , and fluorine or hydrogen impurities were below detection limit. The resistivity and ratio of the TaN thin films increased with the plasma time, and did not saturate. In addition, increasing the ratio induced a sudden rise in the resistivity, which was related to the formation of a phase. This dielectric phase was reduced by lowering the ratio. In addition, when plasma post-treatment was applied to the deposition process, the resistivity of the TaN thin films was reduced to .
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