Year-end Sale % OFF 
Abstract
The deposition of TaN thin films were achieved using plasma enhanced atomic layer deposition (PEALD) technique. In this paper, we demonstrate the ability to adjust film properties such as film composition, density and resistivity with various plasma conditions. The TaN films deposited by PEALD exhibited a lower resistivity of 200 - 500 μΩ-cm compared to thermally deposited ALD TaN films (> 1000.μΩ-cm). The density increases to 11-13 g/cm3 compared to 9 g/cm3 for thermal ALD films. The Cu diffusion barrier property of the PEALD films was superior to thermal ALD films. The application of the film in back end of line Cu interconnects will be discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
