Abstract
The deposition of TaN thin films were achieved using plasma enhanced atomic layer deposition (PEALD) technique. In this paper, we demonstrate the ability to adjust film properties such as film composition, density and resistivity with various plasma conditions. The TaN films deposited by PEALD exhibited a lower resistivity of 200 - 500 μΩ-cm compared to thermally deposited ALD TaN films (> 1000.μΩ-cm). The density increases to 11-13 g/cm3 compared to 9 g/cm3 for thermal ALD films. The Cu diffusion barrier property of the PEALD films was superior to thermal ALD films. The application of the film in back end of line Cu interconnects will be discussed.
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