Abstract
As the nano-electronics industry looks to transition to both three dimensional transistor and interconnect technologies at the < 22 nm node, highly conformal dielectric coatings with precise thickness control are increasingly being demanded. Plasma Enhanced Chemical Vapor Deposition (PECVD) currently fills this role for most applications requiring low temperature processing, but does not always meet step coverage and thickness precision requirements. We present results for a hybrid technique, Plasma Enhanced Atomic Layer Deposition (PEALD), that utilizes typical PECVD process gases and tooling while delivering improved topography coverage and thickness control. Specifically, we show that alternating SiH4 gas / N2 plasma exposures applied in an atomic layer deposition sequence can be used to deposit SiN films in a self limiting fashion.
Published Version
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