Abstract
Room temperature measurements of plasma reflectance have been made on polycrystalline homogeneous n type samples of GaxIn(1−x) As and InAsxSb(1−x) alloys. An analysis for the case of general degeneracy in a Kane-type conduction band has been developed, to allow the determination of electron effective mass (m0*/m) at the bottom of the conduction band. Hence values of m0*/m vs. x have been determined for both alloy systems. From the experimental data, values of relaxation time and optical mobility have also been calculated.
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