Abstract
Abstract We report the determination of electron effective mass in InN by using cyclotron resonance (CR) spectroscopy. To avoid the influence of sapphire substrate on CR measurements, InN epilayer with low residual electron concentration of 5 × 1017 cm−3 was grown on silicon substrate. Together with analyzing the effect of non-parabolic band structure, we derive that the isotropy c-plane electron effective mass of InN epilayer is 0 . 0 50 ± 0.0 0 2 m0 and 0 . 0 58 ± 0.0 0 2 m0 at temperatures of 4.2 and 50 K, respectively, which is in good agreement with our theoretical predication of the effective mass near the Γ point.
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