Abstract
During the device fabrication, thin dielectric layers experience a wide range of photoresist (PR) strip processes after various implantations carried out with the thin dielectric layers exposed. Degradation of the thin dielectric layers by the PR strip process using plasma is well known to cause yield reduction and reliability deterioration. This paper investigates a PR strip method using ozone followed by sulfuric-peroxide mixture (SPM) solution cleaning and finds it significantly effective in PR strip performance even at the damaged PR by high-dose and high-energy implantations. The method dramatically reduces gate leakage current, resulting in significant improvement in gate oxide integrity. The PR strip technology is significantly effective for the reduction of plasma damage-induced dark current and white pixel defects of a complementary metal oxide semiconductor image sensor fabricated with technology node.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
