Abstract
High-quality TiN films were deposited in an electron-cyclotron-resonance (ECR) plasma process at low substrate temperatures between 100 and 450°C using titanium(IV)isopropoxide (TIP) Ti[OCH(CH 3) 2] 4 as a precursor. TIP was introduced into the downstream region of an ECR nitrogen or ammonia plasma. The electrical properties of the gold coloured TiN layers (100–400 μΩcm) depend mainly on the deposition rate. Despite the use of an oxygen-containing titanium precursor the oxygen content in the TiN was found to be ≤ 2 at%. The measured resistivities and the purity of the TiN films indicate a selective separation of the isopropoxide ligand in the ECR downstream plasma. The films were characterized by resistivity measurements, secondary ion mass spectrometry (SIMS) and x-ray diffraction (XRD). Chemical ionization mass spectrometry (CIMS) investigations of the gas mixture in the reactor using nitrogen as plasma gas revealed the formation of acetone as a byproduct of the deposition process.
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