Deposition of high-quality TiN using tetra-isopropoxide titanium in an electron cyclotron resonance plasma process

Abstract

High-quality TiN films were deposited in an electron cyclotron resonance (ECR) plasma process at low substrate temperatures between 100 and 450 °C using tetra-isopropoxide titanium (TIPT) {Ti[OCH(CH3)2]4} as precursor. TIPT was introduced into the downstream region of an ECR nitrogen or ammonia plasma. The electrical properties of the gold colored TiN layers (100–400 μΩ cm) depend on the deposition rate and the substrate temperature. Despite the use of an oxygen containing titanium precursor the oxygen content in the TiN was found to be ≤2 at.%. The measured resistivities and the purity of the TiN films indicate a selective cleavage of the isopropoxide ligand in the ECR downstream plasma. The films were characterized by resistivity measurements and secondary ion mass spectrometry.