Abstract
High quality amorphous arsenic selenide chalcogenide films of different structure and stoichiometry were synthesized via plasma-enhanced chemical vapor deposition (PECVD). The low-temperature non-equilibrium RF (13.56 MHz) argon inductively-coupled plasma at low pressure (0.1 Torr) was implemented for the process. Commercial high-pure elemental arsenic and selenium were utilized as the starting materials. The chemical content and the structure of the samples were altered via change of parameters of the plasma process. The in situ optical emission spectroscopy of the chemically active plasma was employed to pinpoint the ways of initiation of plasma-chemical interactions between precursors. The obtained characteristics of the arsenic selenide PECVD films have been compared with ones for CVD. The behavior of impurities of the carbon nature in the processes of PECVD and CVD deposition was also studied.
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