Abstract
Si-oxide/Si-oxynitride (SiOX/SiNXOY) double-layer films were prepared by controlling the operation parameters of plasma chemical vapor deposition in N2-diluted silane mixed with H2-diluted silane or with O2 under various mixing ratios. The compositions of the layers of the films were measured with electron spectroscopy for chemical analysis (ESCA) along the depth from the film surface by Ar-ion etching. The results have revealed that O-atoms diffuse into and N-atoms diffuse out of the SiNXOY layer during SiOX layer deposition. By making use of the relation between the refractive index and atomic ratio Si/O or O/N for SiNXOY films, the gradual changes of the refractive index in the SiOX/SiNXOY interfacial (or transition) region has been determined. As a result, the SiOX/SiNXOY double-layer antireflective coating (ARC) has increased the short circuit current density of single-crystal Si solar cells by about 56% in comparison to bare cells.
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