Abstract
Plasma charging effects on the gate insulator of high dielectric constant (k) material in MOS devices was investigated because of the different trap-assisted conduction mechanism from that in the oxide. Plasma-induced degradation in gate leakage current and time to breakdown is clearly observed in this work. MOS device with Si/sub 3/N/sub 4/ film seems to have smaller degradation of gate leakage current while it suffers shorter time to breakdown as compared to Ta/sub 2/O/sub 5/ samples. For devices with Ta/sub 2/O/sub 5/ film, a larger physical thickness suffers more reliability degradation from plasma charging damage because of more traps in the Ta/sub 2/O/sub 5/ bulk. Thus, a smaller physical thickness of high-k dielectric film is favorable for sub-micron MOS devices of ULSI application.
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