Abstract
We measured the chlorine plasma characteristics in reactive ion beam etching (RIBE) and chemically assisted ion beam etching (CAIBE) process. In the CAIBE process, the energy peak of Cl+ ionized by Ar+ appears in the energy range of 50–70 eV and this Cl+ energy peak increases with an increase of Ar+ energy. We observed that the excited state Cl2 density in CAIBE is lower than that in RIBE as measured by appearance mass spectrometry (AMS).
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