Abstract
Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 10 10 cm −2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes.
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