Abstract
In synthsis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO<SUB>3</SUB>, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer of diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH<SUB>4</SUB>/H<SUB>2</SUB> ratio and substrate temperatures influence the diamond nucleation effectively.
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