Abstract
Plasma anodic oxidation was used to obtain thick insulator films on InP, and highly-resistive gate insulator films with low interface state density were obtained by one sequential plasma process. The film formation mechanisms were revealed by structural analysis using AES on the grown film. A native oxide of InP grows in the first stage, and sputtered aluminum from the inner discharge electrodes then deposits on the native oxide, taking the form of aluminum oxide. The effects of the sample bias on the rate of growth of the film are discussed. The electrical properties of MIS diodes using the plasma anodic oxide show that the interface state density around the Fermi level is 2.5∼5×1012 cm-2eV-1, and the resistivity and the breakdown voltage are 1×1011 Ωcm and 1.5×106 V/cm, respectively.
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