Abstract
An attempt has been made to correlate the interface state characteristics of the GaN/GaAs MIS structure with the composition at the interface as obtained from Auger spectroscopy. The considerably reduced interface state density of nitrogen annealed samples is due to the reduction of the oxygen content and the corresponding increase of the nitrogen content at the GaAs/GaN interface. The interface state density for this MIS structure shows a two peaked distribution and is characterised by a much lower interface state density in the upper half of the band gap in comparison with native oxides and other deposited insulators.
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