Abstract
Planar optical waveguides were formed in Ce:SBN and Cu:KNSBN crystals, respectively, by means of 6.0 MeV B 3+ ion implantation at a dose of 2×10 14 ions/cm 2 at room temperatures. The prism coupling method was performed to characterize the dark-mode property of the waveguides. The reconstructed refractive index profiles in the waveguides were found to be typical barrier-type distributions. Transport and range of ions in matter (TRIM 98) code was used to simulate the process of the implantations. The shapes of nuclear energy loss distribution of the B 3+ implantation were similar to those of the waveguide refractive index profiles, which means an inherent relationship between the waveguide formation and the energetic energy deposition.
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