Abstract
In this letter, a simple edge termination is described which can be used to achieve nearly ideal parallel-plane breakdown voltage for GaN devices. This technique involves implanting a neutral species on the edges of devices to form a high-resistive amorphous layer. With this termination, formed by using argon implantation, the breakdown voltage of GaN Schottky barrier diodes was increased from 300 V for unterminated diodes to 1650 V after termination.
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