Abstract

The fabrication and performance of a monolihtic optical receiver chip consisting of a pin photodiode and a transimpedance preamplifier on a GaAs semi-insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation in the semi-insulating substrate. The integration scheme results in a planar surface which simplifies the processing of optoelectronic integrated chips.

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