Planar Hall effect of the Fe3 Si epitaxial films with different in-plane configurations on MgO substrates

Abstract

Fe3Si films with (001), (112), and (011) c-axis orientations were grown on MgO(001), (011), and (111) substrates by sputtering, respectively. The epitaxial relationship of the Fe3Si films on MgO was verified by X-ray diffractions (XRDs) with θ−2θ and ϕ scans. All the planar Hall resistance (PHR) curves of the Fe3Si films with different orientations show a nearly sinusoidal behavior at high fields (H ≥ 100 Oe). When the magnetic field is below 100 Oe, the planar Hall effect (PHE) lineshapes of the Fe3Si(001) and Fe3Si(112) films deviate from the sin2θM function and show abrupt switching patterns. Meanwhile, the curves of PHE of the Fe3Si(011) film show triangle shape. The PHE at high fields can be interpreted by single domain magnetic moments reversal models. The different low-field PHEs in the Fe3Si films were explained by multi-domain magnetic properties and different in-plane epitaxial configurations, which are closely correlated to the relation between the in-plane symmetries of the films and substrates.