Abstract
An integrated oscillator/antenna is presented that uses a single microstrip leaky-wave structure as both the resonant and the radiating element. This resonant antenna is connected to a GaAs metal-semiconductor field-effect transistor which acts as the negative resistance element in the oscillator circuit. This type of oscillator is similar in its operating principle to one reported using Gunn diodes and a periodically notched dielectric image guide. This circuit exhibits the high DC-RF conversion efficiency that is typical of field-effect transistor oscillators. The planar circuit is simple and inexpensive to construct, occupies a small volume, and can conform to different surface profiles. Such circuits are suitable for use in millimeter-wave systems as well as at microwave frequencies. A design procedure is given, and the performance of X-band prototype circuits is reported. Prototype circuits showed a 9 dB isotropic conversion gain and 40 MHz tuning range at 9.5 GHz. >
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