Abstract

New results in erbium-doped planar waveguide amplifiers and lasers are presented. The waveguides are produced in silica-on-silicon technology using plasma-enhanced chemical vapor deposition. Waveguide propagation losses outside the erbium absorption band are improved to values below 0.05 dB/cm for a core–cladding index step of around 1.4%. Amplifier arrays show a net gain of more than 12 dB over the entire C-band.

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