Abstract
We have analysed by computer simulation the evolution of defects caused by self-irradiation of crystalline silicon (c-Si) at high temperatures. A classical molecular dynamics simulation (MD) was followed by defect analysis using the pixel mapping (PM) method. The incident Si ion energy was 5keV and the target temperature was set to 1000K. In the present simulation, we aimed to reproduce experimentally observed {311} planer defects. So far we did not observe long chain structures towards the 〈110〉 direction, nor remarkable platelet {311} planar defects. Nevertheless we observed a significant increase of 〈110〉-oriented self-interstitial dimers and a small fraction of linear trimers, which will be the initial stages of 〈110〉-rod formation.
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