Abstract
AbstractWe have proposed a numerical methodology called the pixel mapping (PM) method which is based on crystallography. The PM method can characterize various types of defects in 24 prototype crystals listed in the Strukturbericht database. It identifies point defects, linear defects, planar defects (including antiphase domains in compound crystals), and also structure change (including amorphization). The long‐range order (LRO) parameter has been defined as a set of LRO components for each prototype. A further advantage of the PM method results from its coarse‐grained viewpoint. This allows us to specify the Miller index of a planar defect with the areal density or crystallographic direction of a linear defect. Using PM we found a tetrahedral antisite cluster, (CSi(SiC)4), in 3C‐SiC due to ion irradiation. The bonding directions from the central to the surrounding atoms were all in the <111> direction. We examined the reason why such a cluster was formed. Whenever this type of cluster was formed, collapse of LRO preceded, where large numbers of complexes of antisites–vacancy pairs emerged. © 2011 Wiley Periodicals, Inc. Electr Eng Jpn, 177(3): 54–61, 2011; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21151
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
