Abstract
A new version of the construction of the extraordinary magnetoresistance e ect (EMR) based magnetic sensor has been proposed [2]. The di erences between the original three dimensional (3D) construction and proposed 2D (planar) construction are presented. In proposed construction the metallic thin lm (shunt) is coplanar with the semiconductor sensitive element. There are advantages of that planar construction like easier way of technological obtaining of the device. Another advantage is its application for EMR sensors based on new electronic materials like graphene and topological insulator thin lms. The validity of the planar construction has been experimentally con rmed for model EMR sensors based on InSb/Ag structures. Comparison of the obtained experimental data with computational simulations of the EMR e ect on planar model EMR sensors is performed Finite element method (FEM) is used as a tool for obtaining EMR e ect simulations.
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