Structural and Electrical Properties of Al-Doped ZnOand Al, B-Codoped ZnO Films Deposited on Flexible Substrate

Abstract

To investigate e ect of addictive B atom in ZnO transparent conductive oxidation (TCO) lm, TCO lms of thickness of 300 nm of Al-doped ZnO (AZO) and Al-, B-codoped ZnO (AZOB) were deposited on exible substrate by using a DC-sputtering method. As the doping materials were modi ed, the structural and the electrical properties of the thin lms were investigated. Surface electrical measurements (SEM) and X-ray di raction (XRD) suggested that varying the doping materials a ect the structure and the crystallization of the TCO thin lms. Electrical and photonic property analysis of fabricated thin lms was performed by 4-probe resistivity system and UVvisible spectrometer. All the lms were exhibited preferred orientation of wurtzite of bulk ZnO (002) plane. The resistivity of the AZOB thin lm was 1.84 10 3 -cm and transmission was over 80 % in visible range of the deposited thin lms on a PC. These results suggest that the presence of additional boron impurity lead to improve structural defects.