Planar 100 GHz silicon detector circuits

Abstract

On high resistive silicon substrates Schottky barrier diodes have been monolithically integrated with planar antenna structures. The Schottky barrier diodes were fabricated on n+ diffusion regions with thin epitaxial layers grown by molecular beam epitaxy. Low series resistance (≪ 6 ?), ideality factor of less than 1.1 and cut-off frequencies up to 1 THz have been achieved. The maximum sensitivity of the detector-was 90 mV/(mW cm?2) at 94 GHz.