Abstract
We performed a plan-view and cross-sectional photoluminescence (PL) imaging and a spectral analysis of threading dislocations in 4H-SiC epilayers in the near-infrared region. The bright PL spots of threading screw dislocations (TSDs) and threading edge dislocations (TEDs) observed in the plan-view PL imaging are compared with the grazing incidence synchrotron X-ray topography contrast, and precise discrimination of threading dislocations using the PL technique and the direct acquisition of Burgers vector directions of TEDs are demonstrated. The inclination angles of TSDs and TEDs across a thick epilayer are revealed by the cross-sectional PL imaging, and the variations in the plan-view PL appearances of the threading dislocations are confirmed to originate from the line directions of such dislocations.
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