Abstract
Photoluminescence (PL) signatures of 4H-SiC bare and epitaxial wafers from a surface inspection tool have been studied. Large variations in PL black or white dot densities were confirmed for comparable crystal quality and growth process conditions. Comparison with KOH etching results confirms that both PL black and white dots are tied to discrete threading dislocations. PL spectra results suggest dislocation decoration by donor-acceptor pairs.
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