Abstract
A description of ion-irradiation-induced reduction in the photoluminescence (PL) signal from porous silicon is given and a simple model which is consistent with a nanocrystalline Si structure is presented. Ion irradiation with 250 keV Ne is used to controllably reduce the integrated PL signal by 20% after a fluence of 4*1012 Ne cm-2 and completely eliminate the PL signal after a fluence of 4*1013 Ne cm-2. The use of vacuum and air annealing to recover ion-induced damage is also described, but the high temperatures for annealing cause elimination of the PL signal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
